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| v00.0504 MICROWAVE CORPORATION HMC452QS16G InGaP HBT 1 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz Features Output IP3: +48 dBm Gain: 15.5 dB @ 900 MHz 46% PAE @ +31 dBm Pout +24 dBm CDMA2000 Channel Power@ -45 dBc ACP Single +5V Supply Integrated Power Control (VPD) QSOP16G SMT Package: 29.4 mm2 8 AMPLIFIERS - SMT Typical Applications The HMC452QS16G is ideal for applications requiring a high dynamic range amplifier: * GSM, GPRS & EDGE * CDMA & W-CDMA * CATV/Cable Modem * Fixed Wireless & WLL Functional Diagram General Description The HMC452QS16G is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 0.45 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 15.5 dB from 0.8 to 1.0 GHz and 10 dB from 1.8 to 2.0 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +48 dBm at 0.9 GHz and 1.9 GHz. The power control (VPD) can be used for full power down or RF output power/current control. The high output IP3 and PAE makes the HMC452QS16G an ideal power amplifier for Cellular/PCS/3G, WLL, ISM and Fixed Wireless applications. Electrical Specifications, TA = +25C, Vs= +5V, VPD = +5V (note 1) Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) (note 2) Noise Figure Supply Current (Icq) Control Current (IPD) 45 27 13 Min. Typ. 810 - 960 15.5 0.012 9 12 30 31 48 7 485 10 45 28 0.02 7.5 Max. Min. Typ. 1710 - 1990 10 0.012 17 15 31 31.5 48 7 485 10 0.02 Max. Units MHz dB dB / C dB dB dBm dBm dBm dB mA mA Note 1: Specifications and data reflect HMC452QS16G measured using the respective application circuits for each designated frequency band found herein. Contact the HMC Applications Group for assistance in optimizing performance for your application. Note 2: Two-tone input power of -10 dBm per tone, 1 MHz spacing. 8 - 226 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0504 MICROWAVE CORPORATION HMC452QS16G InGaP HBT 1 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz Broadband Gain & Return Loss @ 900 MHz 20 15 10 RESPONSE (dB) S11 Gain vs. Temperature @ 900 MHz 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 0.7 8 AMPLIFIERS - SMT 8 - 227 0 -5 -10 -15 -20 0.4 S22 GAIN (dB) 5 S21 +25 C +85 C -40 C 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature @ 900 MHz 0 -2 -4 RETURN LOSS (dB) -6 -8 -10 -12 -14 -16 -18 -20 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 +25 C +85 C -40 C Output Return Loss vs. Temperature @ 900 MHz 0 +25 C +85 C -40 C -5 RETURN LOSS (dB) -10 -15 -20 -25 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Temperature @ 900 MHz 34 32 30 P1dB (dBm) Psat vs. Temperature @ 900 MHz 34 32 30 Psat (dBm) 28 26 24 22 20 18 0.7 +25 C +85 C -40 C 28 26 24 22 20 18 0.7 +25 C +85 C -40 C 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0504 MICROWAVE CORPORATION HMC452QS16G InGaP HBT 1 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz 8 AMPLIFIERS - SMT Output IP3 vs. Temperature @ 900 MHz 54 52 50 48 OIP3 (dBm) 46 44 42 40 38 36 34 0.75 0.8 +25 C +85 C -40 C Noise Figure vs. Temperature @ 900 MHz 10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 +25 C +85 C -40 C 0.85 0.9 0.95 1 0 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 FREQUENCY (GHz) FREQUENCY (GHz) Reverse Isolation vs. Temperature @ 900 MHz 0 -5 ISOLATION (dB) -10 -15 -20 -25 -30 0.7 +25 C +85 C -40 C Gain, Power & IP3 vs. Supply Voltage @ 900 MHz GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 55 50 45 40 35 30 25 20 15 10 4.5 Gain P1dB Psat OIP3 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 FREQUENCY (GHz) 4.75 5 Vs (Vdc) 5.25 5.5 Gain, Power & IP3 vs. Supply Current @ 900 MHz* GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 55 50 45 40 35 30 25 20 15 10 250 Gain P1dB Psat OIP3 ACPR vs. Supply Voltage @ 910 MHz CDMA IS95, 9 Channels Forward -25 -30 -35 ACPR (dBc) -40 -45 -50 -55 -60 -65 Source ACPR -70 12 14 16 18 20 22 24 26 28 CDMA IS95 Frequency: 910 MHz Integration BW: 1.228 MHz Forward Link, 9 Channels 5V 4.5V 5.5V 300 350 400 Icq (mA) 450 500 Channel Power (dBm) * Icq is controlled by varying VPD. 8 - 228 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0504 MICROWAVE CORPORATION HMC452QS16G InGaP HBT 1 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz Broadband Gain & Return Loss @ 1900 MHz 15 10 5 RESPONSE (dB) Gain vs. Temperature @ 1900 MHz 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 1.7 8 AMPLIFIERS - SMT 8 - 229 S11 -5 -10 -15 -20 -25 1.2 S22 GAIN (dB) 0 S21 +25 C +85 C -40 C 1.4 1.6 1.8 2 2.2 1.8 1.9 FREQUENCY (GHz) 2 2.1 FREQUENCY (GHz) Input Return Loss vs. Temperature @ 1900 MHz 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 -40 1.7 +25 C +85 C -40 C Output Return Loss vs. Temperature @ 1900 MHz 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 1.7 +25 C +85 C -40 C 1.8 1.9 FREQUENCY (GHz) 2 2.1 1.8 1.9 FREQUENCY (GHz) 2 2.1 P1dB vs. Temperature @ 1900 MHz 34 32 30 P1dB (dBm) Psat vs. Temperature @ 1900 MHz 34 32 30 Psat (dBm) 28 26 24 22 20 18 1.7 +25 C +85 C -40 C 28 26 24 22 20 18 1.7 +25 C +85 C -40 C 1.8 1.9 FREQUENCY (GHz) 2 2.1 1.8 1.9 FREQUENCY (GHz) 2 2.1 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0504 MICROWAVE CORPORATION HMC452QS16G InGaP HBT 1 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz 8 AMPLIFIERS - SMT Output IP3 vs. Temperature @ 1900 MHz 54 52 50 48 OIP3 (dBm) 46 44 42 40 38 36 34 1.7 1.8 +25 C +85 C -40 C Noise Figure vs. Temperature @ 1900 MHz 10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 +25 C +85 C -40 C 1.9 FREQUENCY (GHz) 2 2.1 0 1.7 1.8 1.9 FREQUENCY (GHz) 2 2.1 Reverse Isolation vs. Temperature @ 1900 MHz 0 +25 C +85 C -40 C Gain, Power & IP3 vs. Supply Voltage @ 1900 MHz GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 55 50 45 40 35 30 25 20 15 10 5 4.5 4.75 5 Vs (Vdc) 5.25 5.5 Gain P1dB Psat OIP3 -5 ISOLATION (dB) -10 -15 -20 -25 1.7 1.8 1.9 FREQUENCY (GHz) 2 2.1 Gain, Power & IP3 vs. Supply Current @ 1900 MHz GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 50 45 40 35 30 25 20 15 10 5 250 Gain P1dB Psat OIP3 ACPR vs. Supply Voltage @ 1960 MHz CDMA 2000, 9 Channels Forward -25 -30 -35 ACPR (dBc) -40 -45 -50 -55 -60 -65 Source ACPR -70 14 16 18 20 22 24 26 28 4.5V CDMA2000 Frequency: 1.96 GHz Integration BW: 1.228 MHz Forward Link, SR1, 9 Channels 5V 5.5V 300 350 400 Icq (mA) 450 500 Channel Power (dBm) 8 - 230 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0504 MICROWAVE CORPORATION HMC452QS16G InGaP HBT 1 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz Power Dissipation 3 Max Pdiss @ +85C Absolute Maximum Ratings Collector Bias Voltage (Vcc) Control Voltage (Vpd) +6.0 Vdc +5.3 Vdc +35 dBm 150 C 2.7 W 8 AMPLIFIERS - SMT 8 - 231 POWER DISSIPATION (W) 2.5 1900 MHz RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc) Junction Temperature 2 Continuous Pdiss (T = 85 C) (derate 41.5 mW/C above 85 C) 1.5 900 MHz Thermal Resistance (junction to ground paddle) Storage Temperature 24.1 C/W -65 to +150 C -40 to +85 C 1 -5 0 5 10 15 20 INPUT POWER (dBm) Operating Temperature Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: MOLDING COMPOUND MP-180S OR EQUIVALENT. 2. LEAD MATERIAL: Cu w/Ag SPOT PLATING. 3. LEAD PLATING: 80Sn/20Pb 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0504 MICROWAVE CORPORATION HMC452QS16G InGaP HBT 1 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz 8 AMPLIFIERS - SMT Pin Descriptions Pin Number Function Description Interface Schematic 1, 2, 4, 5, 710, 13-16 GND These pins & package bottom must be connected to RF/DC ground. 3 VPD Power control pin. For maximum power, this pin should be connected to 5.0V. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 6 RFIN This pin is DC coupled. Off chip matching components are required. See Application Circuit herein. RF output and DC Bias input for the output amplifier stage. Off chip matching components are required. See Application Circuit herein. 11, 12 RFOUT 8 - 232 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0504 MICROWAVE CORPORATION HMC452QS16G InGaP HBT 1 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz 900 MHz Application Circuit This circuit was used to specify the performance for 810-960 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. 8 AMPLIFIERS - SMT Note: C3 should be placed as close to pins as possible. TL1 Impedance Physical Length Electrical Length 50 Ohm 0.21" 11 TL2 50 Ohm 0.17" 9 TL3 50 Ohm 0.23" 12 Recommended Component Values C1 C2, C6 C3, C7 C4 C5 C8, C9 L1, L2 R1 10 pF 5.6 pF 100 pF 2.2 pF 5 pF 2.2 F 20 nH 5.6 Ohm PCB Material: 10 mil Rogers 4350, Er = 3.48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 233 v00.0504 MICROWAVE CORPORATION HMC452QS16G InGaP HBT 1 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz 8 AMPLIFIERS - SMT 900 MHz Evaluation PCB List of Materials for Evaluation PCB 108715-900* Item J1 - J2 J3 C1 C2, C6 C3, C7 C4 C5 C8, C9 L1, L2 R1 U1 PCB** Description PC Mount SMA Connector 2 mm DC Header 10 pF Capacitor, 0402 Pkg. 5.2 pF Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. 2.2 pF Capacitor, 0402 Pkg. 5 pF Capacitor, 0402 Pkg. 2.2 F Capacitor, Tantalum 20 nH Inductor, 0402 Pkg. 5.6 Ohms HMC452QS16G Linear Amp 108713 Evaluation PCB, 10 mils The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. ** Circuit Board Material: Rogers 4350, Er = 3.48 * Reference this number when ordering complete evaluation PCB. 8 - 234 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0504 MICROWAVE CORPORATION HMC452QS16G InGaP HBT 1 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz 1900 MHz Application Circuit This circuit was used to specify the performance for 1710-1990 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. 8 AMPLIFIERS - SMT Note: C2, C3 and C4 should be placed as close to pins as possible. Recommended Component Values L1, L2 R1 C1 C2 C3, C5, C6 C4 C7, C8 20 nH 5.6 Ohms 5 pF 27 pF 100 pF 3.9 pF 2.2 F For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 235 v00.0504 MICROWAVE CORPORATION HMC452QS16G InGaP HBT 1 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz 8 AMPLIFIERS - SMT 1900 MHz Evaluation PCB List of Materials for Evaluation PCB 108703-1900* Item J1 - J2 J3 C1 C2 C3, C5, C6 C4 C7, C8 L1, L2 R1 U1 PCB** Description PC Mount SMA Connector 2 mm DC Header 5.0 pF Capacitor, 0402 Pkg. 27 pF Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. 3.9 pF Capacitor, 0402 Pkg. 2.2 F Capacitor, Tantalum 20 nH Inductor, 0402 Pkg. 5.6 Ohm Resistor, 0402 Pkg. HMC452QS16G 108701 Evaluation PCB, 10 mils The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. ** Circuit Board Material: Rogers 4350, Er = 3.48 * Reference this number when ordering complete evaluation PCB. 8 - 236 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0504 MICROWAVE CORPORATION HMC452QS16G InGaP HBT 1 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz Notes: 8 AMPLIFIERS - SMT For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 237 |
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